Transphorm’s Reference Design Portfolio Initiates Development of GaN USB-C PD Power Adapters

Goleta, California, USA:

Transphorm, Inc. (Nasdaq: TGAN)—a pioneer and global provider of high-reliability, high-performance gallium nitride (GaN)-based power conversion products—today announced the availability of seven reference designs for to accelerate the development of USB-C PD-based GaN power adapters. The portfolio includes a wide range of open-frame design options with different topologies, outputs, and wattages (45W to 140W) to choose from.


SuperGaN® technology difference
Power adapter reference designs use Gen IV 650V SuperGaN FETs to deliver the ease of design, high reliability with high performance benefits that have become synonymous with Transphorm GaN devices. In a recent analysis, compared to a 175 mOhm electronic-mode GaN device, Transphorm’s 240 mOhm SuperGaN FET showed less resistance increase at temperatures above 75°C and better performance at 50% and 100 % (full) power.


More comparison details between the two GaN solutions can be found here.


Power Adapter Reference Designs
Transphorm’s portfolio includes five open frameworks USB-C PD Reference Designs ranging in frequency from 140 to 300 kHz. As an example, Transphorm has partnered with Silanna Semiconductor on a 65 W active feedback clamp-on (ACF) RD operating at 140 kHz with a peak efficiency of 94.5%.


  • (1x) 45W RD adapter delivers 24 W/in3 power density in a quasi-resonant feedback (QRF) topology
  • (3x) 65W RD adapters delivering 30 W/in3 power density in ACF or QRF topologies
  • (1x) 100W RD adapter delivers 18 W/in3 power density in a power factor correction (PFC) + QRF topology

Transphorm’s portfolio also includes two open frameworks USB-C PD/PPS Reference Designs ranging in frequency from 110 to 140 kHz. Transphorm partnered with Diodes Inc. on both solutions, leveraging the company’s ACF controller to achieve peak efficiency in excess of 93.5%.


  • (1x) 65W RD adapter delivers 29 W/in3 power density in an ACF topology
  • (1x) 140W RD adapter delivers 20 W/in3 power density in a PFC+ACF topology

“Transphorm is unique in that it offers the only GaN FET portfolio covering the widest range of power levels for the widest range of applications,” said Tushar Dhayagude, Vice President, Field Applications and technical sales, Transphorm. “Our power adapter reference designs highlight our low power consumption capabilities. We offer controller-independent PQFN and TO-220 devices that can greatly simplify design. These and other features help our customers quickly and easily bring a GaN solution to market that can achieve breakthrough levels of energy efficiency. That’s what Transphorm’s GaN is all about.


The current power adapter reference design portfolio can be found here.


About Transphorm
Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance, high reliability GaN semiconductors for high voltage power conversion applications. With one of the largest Power GaN intellectual property portfolios of over 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high-voltage GaN semiconductor devices. The company’s vertically integrated device business model enables innovation at every stage of development: design, manufacturing, device and application support. Transphorm’s innovations move power electronics beyond the limits of silicon to achieve over 99% efficiency, 40% more power density and 20% less system cost. Transphorm is headquartered in Goleta, California, and has manufacturing operations in Goleta and Aizu, Japan. For more information, please visit Follow us on twitter @transphormusa and WeChat@Transphorm_GaN.



Abdul J. Gaspar